to-126 plastic-encapsulate transistors bd433/435/437 transistor (npn) features amplifier and s witching a pplications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage bd433 bd435 bd437 22 32 45 v v ceo collector-emitter voltage bd433 bd435 bd437 22 32 45 v v ebo emitter-base voltage 5 v i c collector current ?continuous 4 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo bd433 i c =100 a,i e =0 bd435 bd437 22 32 45 v collector-emitter breakdown voltage v ce(sus) (1) bd433 i c =100ma,i b =0 bd435 bd437 22 32 45 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =22v,i e =0 bd433 v cb =32v,i e =0 bd435 v cb =45v,i e =0 bd437 1 00 a collector cut-off current i ceo v ce =22v,i e =0 bd433 v ce =32v,i e =0 bd435 v ce =45v,i e =0 bd437 100 a emitter cut-off current i ebo v eb =5v,i e =0 1 m a h fe(1) (1) v ce =1v,i c =500ma 85 375 h fe(2) (1) v ce =5v,i c =10ma bd433/bd435 bd437 40 30 dc current gain h fe(3) (1) v ce =1v,i c =2a bd433/bd435 bd437 50 40 collector-emitter saturation voltage v ce(sat) (1) i c =2a,i b =0.2a bd433/bd435 bd437 0.5 0.6 v base-emitter voltage v be (1) v ce =1v,i c =2a bd433/bd435 bd437 1.1 1.2 v transition frequency f t v ce =1v,i c =250ma 3 mhz (1) pulse test. to-126 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jan,2013
|
